Electronic Components Datasheet Search
Selected language     English  ▼
Part Name
         Description


SSH6N90A Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. SSH6N90A
Description  Advanced Power MOSFET
Download  7 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo 

   
 2 page
background image
N-CHANNEL
POWER MOSFET
Electrical Characteristics (T
C=25
ΟC unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
∆BV/∆T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V/
ΟC
V
nA
µA
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS=0V,ID=250µA
I
D=250µA
See Fig 7
V
DS=5V,ID=250µA
V
GS=30V
V
GS=-30V
V
DS=900V
V
DS=720V,TC=125
ΟC
V
GS=10V,ID=3A
*
V
DS=50V,ID=3A
V
DD=450V,ID=6A,
R
G=11.5Ω
See Fig 13
V
DS=720V,VGS=10V,
I
D=6A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS=0V,VDS=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
µC
Integral reverse pn-diode
in the MOSFET
T
J=25
ΟC,I
S=6A,VGS=0V
T
J=25
ΟC ,I
F=6A
di
F/dt=100A/µs
O
4
O
4
O
4
O
5
O
5
O
4
O
4
O
4
O
1
SSH6N90A
900
--
2.0
--
--
--
--
--
1.10
--
--
--
--
--
135
54
22
40
99
32
68
11.5
30.9
--
--
3.5
100
-100
25
250
2.3
--
2030
160
63
55
90
210
75
89
--
--
4.28
1560
--
--
--
580
7.34
6
24
1.4
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=35mH, I
AS=6A, VDD=50V, RG=27Ω, Starting T J =25
ΟC
I
SD
6A, di/dt
140A/
µs, V
DD
BV
DSS , Starting T J =25
ΟC
Pulse Test : Pulse Width = 250
µs, Duty Cycle 2%
Essentially Independent of Operating Temperature
<
_
<
_
<
_
<
_
O
1
O
2
O
3
O
4
O
5




Html Pages

1  2  3  4  5  6  7 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
IRF540AAdvanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
IRFS530AAdvanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
IRLM110AAdvanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
IRLWI520AAdvanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
SFH9250LAdvanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
SFP9640LAdvanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
SFRU9310Advanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
SFS9Z34Advanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
SFWI9Z34Advanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
STK830FAdvanced Power MOSFET 1 2 3 4 5 MoreAUK corp

Link URL

Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Bookmark   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com 2003 - 2017    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl