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SSH6N90A Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. SSH6N90A
Description  Advanced Power MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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 1 page
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Advanced Power MOSFET
FEATURES
TO-3P
1.Gate 2. Drain 3. Source
3
2
1
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
µA (Max.) @ V
DS = 900V
Low R
DS(ON) : 1.829 Ω (Typ.)
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C=25
ΟC)
Continuous Drain Current (T
C=100
ΟC)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C=25
ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Characteristic
Value
Units
Symbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J , TSTG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
ΟC
A
ΟC
V
DSS
V
O
1
O
1
O
1
O
2
O
3
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R θJC
R θCS
R θJA
ΟC /W
Characteristic
Max.
Units
Symbol
Typ.
SSH6N90A
BV
DSS = 900 V
R
DS(on) = 2.3 Ω
I
D = 6 A
900
6
3.8
24
667
6
20
1.5
200
1.59
- 55 to +150
300
0.63
--
40
--
0.24
--
30
+
_
©1999 Fairchild Semiconductor Corporation
Rev. B




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