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ZSSC3218BI1B Datasheet(PDF) 8 Page - Integrated Device Technology |
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ZSSC3218BI1B Datasheet(HTML) 8 Page - Integrated Device Technology |
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8 / 55 page  ZSSC3218 Datasheet © 2016 Integrated Device Technology, Inc. 8 April 20, 2016 Parameter Symbol Conditions/Comments Min Typ Max Unit Amplifier Gain Gamp 64 steps 6.6 216 Gain Error Gerr Referenced to nominal gain -2.5 - 2.5 % Sensor Signal Conditioning Performance IC Accuracy Error 1) ErrA,IC Accuracy error for sensor that is ideally linear (in temperature and measurand) 0.01 %FSO Conversion Rate, 18-Bit SSC fS, SSC Conversion per second for fully corrected 18-bit measurement 270 300 Hz Input Input Voltage Range VINP, VINN Input voltage range at INP and INN 0.65 1.05 V External Sensor Bridge Resistance RBR Full power supply disturbance rejection (PSRR) capabilities 1 10 50 k Ω Reduced PSRR, but full functionality 100 999 Ω Power-Up Start-up Time tSTA1 VDD ramp up to interface communication (see section 3.1) 1 ms tSTA2 VDD ramp up to analog operation 2.5 ms Wake-up Time tWUP1 Sleep to Active State interface communication 0.5 ms tWUP2 Sleep to Active State analog operation 2 ms Oscillator Internal Oscillator Frequency fCLK 3.6 4 4.4 MHz Internal Temperature Sensor Temperature Resolution -40°C to +85°C 0.003 K/LSB Interface and Memory SPI Clock Frequency fC,SPI Maximum capacitance at MISO line: 40pF at VDD=1.8V 1 20 MHz I²C™ Clock Frequency fC,I2C 3.4 MHz Program Time tprog MTP programming time per 16-bit register 5 16 ms Endurance nMTP Number of reprogramming cycles 1000 10000 numeric Data Retention tRET_MTP 1000h at 125°C 10 a 1) Percentage referred to maximum full-scale output (FSO); e.g. for 18-bit measurements: ErrA,IC [%FSO] = 100 · MAX{ | ADCmeas – ADCideal | } / 2 18 . |
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