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ZSSC3218BI1B Datasheet(PDF) 6 Page - Integrated Device Technology |
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ZSSC3218BI1B Datasheet(HTML) 6 Page - Integrated Device Technology |
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6 / 55 page  ZSSC3218 Datasheet © 2016 Integrated Device Technology, Inc. 6 April 20, 2016 1 IC Characteristics 1.1. Absolute Maximum Ratings Note: The absolute maximum ratings are stress ratings only. The ZSSC3218 might not function or be operable above the recommended operating conditions. Stresses exceeding the absolute maximum ratings might also damage the device. In addition, extended exposure to stresses above the recommended operating conditions might affect device reliability. IDT does not recommend designing to the “Absolute Maximum Ratings.” Table 1.1 Maximum Ratings PARAMETER SYMBOL Min TYP MAX UNITS Voltage Reference VSS 0 0 V Analog Supply Voltage VDD -0.4 3.63 V Voltage at all Analog and Digital IO Pins VA_IO, VD_IO -0.5 VDD+0.5 V Input Current into any Pin except RES, SS 1), 2) IIN -100 100 mA Electrostatic Discharge Tolerance – Human Body Model (HBM1) 3) VHBM1 ±4000 - V Storage Temperature TSTOR -50 125 °C 1) Latch-up current limit for RES, ZMDI-test and SS: ±70mA. 2) Latch-up resistance; reference for pin is 0V. 3) HBM1: C = 100pF charged to VHBM1 with resistor R = 1.5kΩ in series based on MIL 883, Method 3015.7. ESD protection referenced to the Human Body Model is tested with devices in ceramic dual in-line packages (CDIP) during product qualification. 1.2. Operating Conditions The reference for all voltages is Vss. Table 1.2 Operating Conditions PARAMETER SYMBOL MIN TYP MAX UNIT Supply Voltage VDD 1.68 - 3.6 V VDD Rise Time tVDD 200 μs Bridge Current 1) IVDDB 1.8 mA 16.5 Operation Temperature Range TAMB -40 - 85 °C External (Parasitic) Capacitance between VDDB and VSS CL 0.01 50 nF 1) Power supply rejection is reduced if a current in the range of 16.5mA > IVDDB > 1.8mA is drawn out of VDDB. |
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