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2SA836 Datasheet(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Part No. 2SA836
Description  TO-92 Plastic-Encapsulate Transistors
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Maker  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Homepage  http://www.cj-elec.com/index.asp
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a
T =25
unless otherwise specified
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.01mA,IE=0
-55
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-55
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.01mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-18V,IE=0
-0.1
A
Emitter cut-off current
IEBO
VEB=-2V,IC=0
-0.05
A
DC current gain
hFE
VCE=-12V, IC=-2mA
160
500
Collector-emitter saturation voltage
VCE(sat)
IC=-10mA,IB=-1mA
-0.5
V
Base-emitter voltage
VBE
VCE=-12V, IC=-2mA
-0.75
V
Collector output capacitance
Cob
VCB=-10V,IE=0, f=1MHz
4
pF
Transition frequency
fT
VCE=-12V,IC=-2mA
150
MHz
CLASSIFICATION OF hFE
RANK
C
D
RANGE
160-320
250-500




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