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2SA821S Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Part No. 2SA821S
Description  TO-92S Plastic-Encapsulate Transistors
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Maker  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Homepage  http://www.cj-elec.com/index.asp
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TO – 92S
1. EMITTER
2. COLLECTOR
3. BASE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SA821S
TRANSISTOR (PNP)
FEATURES
High Breakdown Voltage
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.05mA,IE=0
-210
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-0.1mA,IB=0
-210
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.05mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-150V,IE=0
-1
μA
Emitter cut-off current
IEBO
VEB=-4.5V,IC=0
-1
μA
DC current gain
hFE
VCE=-3V, IC=-5mA
56
270
Collector-emitter saturation voltage
VCE(sat)
IC=-2mA,IB=-0.2mA
-0.6
V
Collector output capacitance
Cob
VCB=-10V,IE=0, f=1MHz
8
pF
Transition frequency
fT
VCE=-5V,IC=-2mA
50
MHz
CLASSIFICATION OF hFE
RANK
N
P
Q
RANGE
56-120
82-180
120-270
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-210
V
VCEO
Collector-Emitter Voltage
-210
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-0.03
A
PC
Collector Power Dissipation
250
mW
RθJA
Thermal Resistance From Junction To Ambient
500
℃/W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
JC T
www.cj-elec.com
1
www.cj-elec.com
1
3
2
A,Jun,2014
D,Jul,2016




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