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2SA719 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Part No. 2SA719
Description  TO-92 Plastic-Encapsulate Transistors
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Maker  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Homepage  http://www.cj-elec.com/index.asp
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA719/2SA720
TRANSISTOR (PNP)
FEATURES
For Low-Frequency Power Amplification
and Driver Amplification
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
2SA719
2SA720
-30
-60
V
VCEO
Collector-Emitter Voltage 2SA719
2SA720
-25
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-500
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
2SA719
2SA720
V(BR)CBO
IC= -10uA, IE=0
-30
-60
V
Collector-emitter breakdown voltage
2SA719
2SA720
V(BR)CEO
IC= -10mA ,IB=0
-25
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -10uA, IC=0 -5
V
Collector cut-off current
ICBO
VCB= -20V,IE=0
-0.1
uA
Emitter cut-off current
IEBO
VEB= -4V,IC=0
-0.1
uA
hFE(1)
VCE=-10V, IC= -150mA
85
340
DC current gain
hFE(2)
VCE=-10V, IC= -500mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=-300mA, IB= -30mA
-0.6
V
Base-emitter saturation voltage
VBE(sat)
IC= -300mA, IB=-30mA
-1.5
V
Transition frequency
fT
VCE= -10V, IC= -50mA
f = 200MHz
200
MHz
Collector Output Capacitance
Cob V
CB=-10V,IE=0,f=1MHZ
15
pF
CLASSIFICATION hFE(1)
Rank
Q
R
S
Range
85-170
120
-240
170-340
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
www.cj-elec.com
1
,
,2015




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