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STP4441 Datasheet(PDF) 2 Page - Stanson Technology

Part No. STP4441
Description  P Channel Enhancement Mode MOSFET
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Maker  STANSON [Stanson Technology]
Homepage  http://www.stansontech.com
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STP4441
P Channel Enhancement Mode MOSFET
-10A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
.
STP4441 2010. V1
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGSS
±
20
V
Continuous Drain Current
(TJ=150℃)
TA=25℃
TA=70℃
ID
-10.0
-4.0
A
Pulsed Drain Current
IDM
-40
A
Continuous Source Current
(Diode Conduction)
IS
-3
A
Power Dissipation
TA=25℃
TA=70℃
PD
2.3
1.3
W
Operation Junction Temperature
TJ
-55/150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
70
/W




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