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STN8205A Datasheet(PDF) 2 Page - Stanson Technology

Part No. STN8205A
Description  Dual N Channel Enhancement Mode MOSFET
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Maker  STANSON [Stanson Technology]
Homepage  http://www.stansontech.com
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STN8205A
Dual N Channel Enhancement Mode MOSFET
5.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205A 2007. V1
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
+/-20
V
Continuous Drain Current (TJ=150℃) TA=25℃
TA=70℃
ID
5.0
A
3.4
Pulsed Drain Current
IDM
30
A
Continuous Source Current (Diode Conduction)
IS
2
A
Power Dissipation
TA=25℃
TA=70℃
PD
2.0
W
1.2
Operation Junction Temperature
TJ
-40/140
Storage Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
105
/W




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