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STN488DN Datasheet(PDF) 1 Page - Stanson Technology

Part No. STN488DN
Description  N Channel Enhancement Mode MOSFET
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Maker  STANSON [Stanson Technology]
Homepage  http://www.stansontech.com
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STN488DN
N Channel Enhancement Mode MOSFET
100A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN488DN 2016 V1
DESCRIPTION
STN488DN uses Trench MOSFET technology that is uniquely optimized to provide the
most efficient nigh frequency switching performance. It has been optimized for low
gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION
POWER PACK 5x6
D
D
D
D
S
S
S
G
Y:Year Code
A:Date Code
B:Package Code
C:Process Code
FEATURE
l
40V/25A, RDS(ON) = 2.2mΩ
@VGS = 10V
l
40V/12A, RDS(ON) = 2.6mΩ
@VGS = 4.5V
l
Super high density cell design for
extremely low RDS(ON)
l
Exceptional on-resistance and
maximum DC current capability
l
PPAK5x6 package design




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