TIP127F datasheet(2/6 Pages) FOSHAN

Part #	TIP127F

Description	Silicon PNP transistor in a TO-220F Plastic Package.

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

TIP127F

Rev.F Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-100

V

Collector to Emitter Voltage

VCEO

-100

V

Emitter to Base Voltage

VEBO

-5.0

V

Collector Current - Continuous

IC

-5.0

A

Collector Current – Continuous(Pulse)

ICP

-8.0

A

Base Current

IB

-120

mA

Collector Power Dissipation

PC

2.0

W

PC(Tc=25 )

℃

60

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=-100mA

IB=0

-100

V

Collector Cut-Off Current

ICEO

VCE=-50V

IB=0

-2.0

mA

Collector Cut-Off Current

ICBO

VCB=-100V

IE=0

-1.0

mA

Emitter Cut-Off Current

IEBO

VEB=-5.0V

IC=0

-2.0

mA

DC Current Gain

hFE(1)

VCE=-3.0V

IC=-0.5A

1000

hFE(2)

VCE=-3.0V

IC=-3.0A

1000

Collector to Emitter Saturation

Voltage

VCE(sat)(1) IC=-3.0A

IB=-12mA

-2.0

V

VCE(sat)(2) IC=-5.0A

IB=-20mA

-4.0

V

Base to Emitter Voltage

VBE

IC=-3.0A

VCE=-3.0V

-2.5

V

Collector output capacitance

Cob

VCB=-10V

IE=0

f=0.1MHz

300

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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