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SGA-4186 Datasheet(PDF) 1 Page - Stanford Microdevices |
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SGA-4186 Datasheet(HTML) 1 Page - Stanford Microdevices |
1 / 5 page 1 Product Description EDS-100637 Rev. D 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. SGA-4186 DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier Product Features Broadband Operation: DC-5000 MHz Cascadable 50 Ohm Patented SiGe Technology Operates From Single Supply Low Thermal Resistance Package Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Sirenza Microdevices SGA-4186 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 45mA , the SGA- 4186 typically provides +28.3 dBm output IP3, 10 dB of gain, and +14.6 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. l o b m y S r e t e m a r a P s t i n U y c n e u q e r F . n i M . p y T . x a M Gn i a G l a n g i S ll a m SB d z H M 0 5 8 z H M 0 5 9 1 z H M 0 0 4 2 0 . 90 . 0 1 2 . 9 9 . 8 0 . 1 1 P B d 1 n o i s s e r p m o C B d 1 t a r e w o P t u p t u Om B d z H M 0 5 8 z H M 0 5 9 1 6 . 4 1 4 . 2 1 P I O 3 t n i o P t p e c r e t n I r e d r O d ri h T t u p t u Om B d z H M 0 5 8 z H M 0 5 9 1 3 . 8 2 5 . 5 2 h t d i w d n a B ) B d 0 1 > ( s s o L n r u t e R y b d e n i m r e t e Dz H M0 0 0 5 L R Is s o L n r u t e R t u p n IB dz H M 0 5 9 13 . 0 2 L R Os s o L n r u t e R t u p t u OB dz H M 0 5 9 14 . 4 2 F Ne r u g i F e s i o NB dz H M 0 5 9 10 . 5 V D e g a tl o V g n it a r e p O e c i v e DV 9 . 22 . 35 . 3 I D t n e r r u C g n it a r e p O e c i v e DA m1 45 49 4 R H T l- j , ) d a e l o t n o it c n u j( e c n a t s i s e R l a m r e h TW / C °7 9 Test Conditions: V S = 8 V I D = 45 mA Typ. OIP 3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm R BIAS = 110 Ohms T L = 25ºC Z S = ZL = 50 Ohms 0 4 8 12 16 012 345 Frequency (GHz) -40 -30 -20 -10 0 GAIN IRL ORL Gain & Return Loss vs. Frequency V D= 3.2 V, ID= 45 mA (Typ.) T L=+25ºC |
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