2SC2235 datasheet(2/6 Pages) FOSHAN

Part #	2SC2235

Description	Silicon NPN transistor in a TO-92LM Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

2SC2235

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

120

V

Collector to Emitter Voltage

VCEO

120

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current (DC)

IC

800

mA

Emitter Current

IE

-800

mA

Collector Power Dissipation

PC

900

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=10mA

IB=0

120

V

Emitter to Base Breakdown

Voltage

VEBO

IE=1.0mA

IC=0

5.0

V

Collector Cut-Off Current

ICBO

VCB=120V

IE=0

0.1

μA

Emitter Cut-Off Current

IEBO

VEB=5.0V

IC=0

0.1

μA

DC Current Gain

hFE

VCE=5.0V

IC=100mA

80

240

Collector to Emitter Saturation

Voltage

VCE(sat) IC=500mA

IB=50mA

1.0

V

Base to Emitter Saturation Voltage

VBE

VCE=5.0V

IC=500mA

1.0

V

Transition Frequency

fT

VCE=5.0V

IC=100mA

120

MHz

Collector output capacitance

Cob

VCB=10V

IE=0

f=1.0MHz

30

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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2SC2235 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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