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IPS0551T Datasheet(PDF) 2 Page - International Rectifier

Part No. IPS0551T
Description  FULLY PROTECTED POWER MOSFET SWITCH
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IPS0551T
2
www.irf.com
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. Notes.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25
oC unless otherwise specified). PCB mounting uses the standard foot-
print with 70
µm copper thickness.
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
37
Vin
Maximum input voltage
-0.3
7
I+in
Maximum IN current
-10
+10
mA
Isd cont.
Diode max. continuous current (1)
(rth=60oC/W)
2.8
(rth=5oC/W)
35
Isd pulsed Diode max. pulsed current (1)
100
Pd
Maximum power dissipation
(1)
(rth=60oC/W)
2
W
ESD1
Electrostatic discharge voltage (Human Body)
4
C=100pF, R=1500
Ω,
ESD2
Electrostatic discharge voltage (Machine Model)
0.5
C=200pF, R=0
Ω, L=10µH
Tj max.
Max. storage & operating junction temp.
-40
+150
Tlead
Lead temperature (soldering, 10 seconds)
300
V
A
kV
oC
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth 1
Thermal resistance free air
60
Rth 2
Thermal resistance to PCB min footprint
60
Rth 3
Thermal resistance to PCB 1" sq. footprint
35
Rth 4
Thermal resistance junction to case
0.7
a
Thermal Characteristics
oC/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Vds (max) Continuous drain to source voltage
18
VIH
High level input voltage
4
6
VIL
Low level input voltage
0
0.5
Ids
Continuous drain current
Tamb=85
oC
(TAmbient = 85oC, IN = 5V, rth = 80oC/W, Tj = 125oC)
8
(TAmbient = 85oC, IN = 5V, rth = 5oC/W, Tj = 125oC)
35
Rin
Recommended resistor in series with IN pin
0.1
0.5
k
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
1
µS
Fr-Isc (2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
V
A




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