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IPS0551T Datasheet(PDF) 3 Page - International Rectifier

Part No. IPS0551T
Description  FULLY PROTECTED POWER MOSFET SWITCH
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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 3 page
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IPS0551T
www.irf.com
3
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Tsd
Over temperature threshold
165
oC
See fig. 1
Isd
Over current threshold
60
90
120
A
See fig. 1
Vreset
IN protection reset threshold
1.5
1.9
2.8
V
Treset
Time to reset protection
2
10
40
µs
Vin = 0V, Tj = 25
oC
EOI_OT
Short circuit energy (cf application note)
100
400
1200
µJ
Vcc = 14V
Protection Characteristics
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rds(on)
ON state resistance Tj = 25
oC
4.5
5.2
@Tj=25
oC
Rds(on)
ON state resistance Tj = 150
oC
7.5
8.8
@Tj=150oC
Idss
Drain to source leakage current
0
0.01
25
µA
Vcc = 14V, Tj = 25oC
@Tj=25oC
V clamp 1 Drain to source clamp voltage 1
37
40
Id = 20mA (see Fig.3 & 4)
V clamp 2 Drain to source clamp voltage 2
43
48
Vsd
Body diode forward voltage
0.85
1Id = 35A, Vin = 0V
Vin clamp IN to source clamp voltage
7
8.0
9.5
Iin = 1 mA
Vth
IN threshold voltage
1
1.5
2
Id = 50mA, Vds = 14V
Iin, on
Input supply current (normal operation)
25
90
300
Vin = 5V
Iin, off
Input supply current (protection mode)
50
130
400
Vin = 5V
over-current triggered
Static Electrical Characteristics
(Tj = 25
oC unless otherwise specified. Standard footprint 70
µm of copper thickness)
Id=Ishutdown (see Fig.3 & 4)
V
µA
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 0.4Ω, Rinput = 50Ω, 100µs pulse, Tj = 25
oC, (unless otherwise specified).
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Ton
Turn-on delay time
0.25
1
4
Tr
Rise time
0.25
14
Trf
Time to 130% final Rds(on)
—15
Toff
Turn-off delay time
1.5
4
8
Tf
Fall time
0.5
2
5
Qin
Total gate charge
200
nC
Vin = 5V
See figure 2
See figure 2
µs
m
Ω Vin = 5V, Ids = 10A




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