2SA1129 datasheet(2/6 Pages) FOSHAN

Part #	2SA1129

Description	Silicon PNP transistor in a TO-220 Plastic Package.

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

2SA1129

Rev.F Mar.-2016

DATA SHEET

http://www.fsbrec.com

2

/ 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-100

V

Collector to Emitter Voltage

VCEO

-40

V

Emitter to Base Voltage

VEBO

-7.0

V

Collector Current - Continuous

IC

-7.0

A

Collector Current – Continuous(Pulse)

ICP

-15

A

Base Current - Continuous

IB

-3.5

A

Collector Power Dissipation

PC(TC=25 )

℃

40

W

PC

1.5

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-Off Current

ICBO

VCB=-40V

IE=0

-10

μA

Emitter Cut-Off Current

IEBO

VEB=-5.0V

IC=0

-10

μA

DC Current Gain

hFE(1)

VCE=-1.0V

IC=-3.0A

40

320

hFE(2)

VCE=-1.0V

IC=-5.0A

20

Collector to Emitter Saturation

Voltage

VCE(sat)(1)

IC=-3.0A

IB=-0.1A

-0.3

V

VCE(sat)(2)

IC=-5.0A

IB=-0.5A

-0.6

V

Base to Emitter Saturation

Voltage

VBE(sat)(1)

IC=-3.0A

IB=-0.1A

-1.5

V

VBE(sat)(2)

IC=-5.0A

IB=-0.5A

-2.0

V

Turn-On Time

ton

IC=-5.0A

RL=4.0Ω

IB1=-IB2=-0.5A

VCC≌-20V

PW 50μs

≌

duty cycle≤2%

1.0

μs

Storage Time

tstg

2.5

μs

Fall Time

tf

1.0

μs

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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