KSA1182 datasheet(2/6 Pages) FOSHAN

Part #	KSA1182

Description	Silicon PNP transistor in a SOT-23 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

KSA1182

Rev.F Apr.-2017

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-35

V

Collector to Emitter Voltage

VCEO

-30

V

Emitter to Base Voltage

VEBO

-5.0

V

Collector Current

IC

-500

mA

Collector Power Dissipation

PC

150

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-Off Current

ICBO

VCB=-35V

IE=0

-0.1

μA

Emitter Cut-Off Current

IEBO

VEB=-5.0V

IC=0

-0.1

μA

hFE(1)

VCE=-1.0V

IC=-100mA

70

240

DC Current Gain

hFE(2)

VCE=-6.0V

IC=-400mA

25

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=-100mA

IB=-10mA

-0.1

-0.25

V

Base to Emitter Saturation Voltage VBE(sat)

IC=-100mA

VCE=-1.0V

-0.8

-1.0

V

Transition Frequency

fT

IC=-20mA

VCE=-6.0V

200

MHz

Collector Output Capacitance

Cob

VCB=-6.0V

IE=0

f=1.0MHz

13

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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KSA1182 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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