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FDH047AN08A0 Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FDH047AN08A0 Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 / 10 page  ©2004 Fairchild Semiconductor Corporation FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge Waveforms for Constant Gate Currents Typical Characteristics T C = 25°C unless otherwise noted 0.4 0.6 0.8 1.0 1.2 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) VGS = VDS, ID = 250µA 0.90 0.95 1.00 1.05 1.10 1.15 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA 100 1000 10000 0.1 1 10 75 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD COSS ≅ CDS + CGD CRSS = CGD 0 2 4 6 8 10 0 25 50 75 100 Qg, GATE CHARGE (nC) VDD = 40V ID = 80A ID = 10A WAVEFORMS IN DESCENDING ORDER: |
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