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RA07H4047M Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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RA07H4047M Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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1 / 9 page  MITSUBISHI RF MOSFET MODULE RA07H4047M 400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/ MOBILE RADIO RA07H4047M MITSUBISHI ELECTRIC 25 April 2003 1/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DESCRIPTION The RA07H4047M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD ≅0 @ V DD=12.5V, VGG=0V) • Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW • η T>40% @ Pout=7W (VGG control), VDD=12.5V, Pin=20mW • Broadband Frequency Range: 400-470MHz • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA07H4047M-E01 RA07H4047M-01 (Japan - packed without desiccator) Antistatic tray, 25 modules/tray BLOCK DIAGRAM 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) 3 2 4 1 5 PACKAGE CODE: H46S |
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