MJD253 datasheet(2/6 Pages) FOSHAN

Part #	MJD253

Description	Silicon PNP transistor in a TO-252 Plastic Package.

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

MJD253

Rev.E May.-2016

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-100

V

Collector to Emitter Voltage

VCEO

-100

V

Emitter to Base Voltage

VEBO

-7.0

V

Collector Current - Continuous

IC(1)

-4.0

A

Peak Collector Current - Continuous

IC(2)

-8.0

A

Base Current - Continuous

IB

-10

A

Collector Power Dissipation

PD

1.4

W

Collector Power Dissipation

PD(Tc=25 )

℃

12.5

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=-10mA

IB=0

-100

V

Collector Cut-Off Current

ICBO(1)

VCB=-100V

IE=0

-0.1

μA

ICBO(2)

VCE=-100V

Tc=125℃

-0.1

mA

Emitter Cut-Off Current

IEBO

VEB=-7.0V

IC=0

-0.1

μA

DC Current Gain

hFE(1)

VCE=-1.0V

IC=-200mA

40

180

hFE(2)

VCE=-1.0V

IC=-1.0A

15

Collector to Emitter Saturation

Voltage

VCE(sat) (1) IC=-500mA

IB=-50mA

-0.3

V

VCE(sat) (2) IC=-1.0A

IB=-100mA

-0.6

V

Base to Emitter Saturation Voltage VBE(sat)

IC=-2.0A

IB=-200mA

-1.8

V

Base to Emitter On Voltage

VBE(on)

VCE=-1.0V

IC=-500mA

-1.5

V

Current- Gain Bandwidth Product

fT

VCE=-10V

IC=-100mA

40

MHz

Output Capacitance

Cob

VCB=-10V

f=0.1MHz

50

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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