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BTA15-400 Datasheet(PDF) 3 Page - Sirectifier Semiconductors |
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BTA15-400 Datasheet(HTML) 3 Page - Sirectifier Semiconductors |
3 / 4 page F ig. 1: Maximum power dis s ipation vers us R MS on-s tate current (full cycle). F ig. 2-1: R MS on-s tate current vers us cas e temperature (full cycle). F ig. 3: R elative variation of thermal impedance versus pulse duration. 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16 18 20 IT (R MS ) (A ) P (W) 0 25 50 75 100 125 0 2 4 6 8 10 12 14 16 18 T c(° C ) IT (R MS ) (A ) B TA B T B 1E -3 1E -2 1E -1 1E +0 1E +1 1E +2 5E +2 1E -2 1E -1 1E +0 tp (s ) K =[Zth/R th] Zth(j-c) Zth(j-a) F ig. 4: O n-s tate characteris tics (maximum values ) F ig. 5: S urge peak on-s tate current versus number of cycles. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 200 V T M (V ) IT M (A ) T j=25° C T j max T j max: V to = 0.85 V R d = 25 m Ω 1 10 100 1000 0 20 40 60 80 100 120 140 160 180 Number of cycles IT S M (A ) Non repetitive T j initial=25°C R epetitive T c=85°C One cycle t=20ms BTA15 Discrete Triacs(Isolated) P3 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
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