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CSD18511KCS Datasheet(PDF) 3 Page - Texas Instruments |
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CSD18511KCS Datasheet(HTML) 3 Page - Texas Instruments |
3 / 10 page 3 CSD18511KCS www.ti.com SLPS548 – JULY 2017 Product Folder Links: CSD18511KCS Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 40 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 32 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.5 1.8 2.4 V RDS(on) Drain-to-source on-resistance VGS = 4.5 V, ID = 100 A 3.2 4.2 m Ω VGS = 10 V, ID = 100 A 2.1 2.6 gfs Transconductance VDS = 4 V, ID = 100 A 249 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = 20 V, ƒ = 1 MHz 4570 5940 pF Coss Output capacitance 454 591 pF Crss Reverse transfer capacitance 235 306 pF RG Series gate resistance 0.9 1.8 Ω Qg Gate charge total (4.5 V) VDS = 20 V, ID = 100 A 31 nC Qg Gate charge total (10 V) 64 nC Qgd Gate charge gate-to-drain 9.7 nC Qgs Gate charge gate-to-source 17.9 nC Qg(th) Gate charge at Vth 7.4 nC Qoss Output charge VDS = 20 V, VGS = 0 V 20.7 nC td(on) Turnon delay time VDS = 20 V, VGS = 10 V, IDS = 100 A, RG = 0 Ω 8 ns tr Rise time 6 ns td(off) Turnoff delay time 17 ns tf Fall time 3 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 100 A, VGS = 0 V 0.9 1.0 V Qrr Reverse recovery charge VDS= 20 V, IF = 100 A, di/dt = 300 A/μs 62 nC trr Reverse recovery time 31 ns 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance 0.8 °C/W RθJA Junction-to-ambient thermal resistance 62 °C/W |
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