Electronic Components Datasheet Search |
|
SDD120N12B Datasheet(PDF) 2 Page - Sirectifier Semiconductors |
|
SDD120N12B Datasheet(HTML) 2 Page - Sirectifier Semiconductors |
2 / 4 page Diode-Diode Modules ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits APPLICATIONS * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Symbol Test Conditions Characteristic Values Unit V VF IF=360A; TVJ=25oC 1.63 VTO For power-loss calculations only 0.75 V rT 1.95 m IR TVJ=TVJM; VR=VRRM 15 mA TVJ=TVJM per diode; DC current per module RthJC 0.30 0.145 K/W per diode; DC current per module RthJK 0.50 0.245 K/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 uC QS TVJ=125oC; IF=50A; -di/dt=3A/us 170 IRM 45 A FEATURES * International standard package * Glass passivated chips * Isolation voltage 3600 V~ * UL file NO.310749 * RoHs compliant * Copper base plate SDD1 0NXXB P2 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
Similar Part No. - SDD120N12B |
|
Similar Description - SDD120N12B |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |