STU446S datasheet(2/6 Pages) FOSHAN

Part #	STU446S

Description	N-CHANNEL MOSFET in a TO-252 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

STU446S

Rev.D May.-2016

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Drain-Source Voltage

VDSS

40

V

Drain Current

ID(Tc=25℃)

38

A

Drain Current

ID(Tc=70℃)

30

A

Drain Current - Pulsed

IDM

111

A

Gate-Source Voltage

VGSS

±20

V

Single Pulsed Avalanche Energy

EAS

64

mJ

Total Power Dissipation

PD(Tc=25℃)

42

W

Operating and Storage Temperature Range

TJ,TSTG

-55 to 150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Drain-Source Breakdown Voltage

BVDSS

VGS=0V

ID=250μA

40

V

Zero Gate Voltage Drain Current

IDSS

VDS=32V

VGS=0V

1.0

μA

Gate-Body Leakage Current

Forward

IGSS

VGS=±20V

VDS=0V

±0.1

μA

Gate Threshold Voltage

VGS(th)

VDS=VGS

ID=250μA

1.0

1.8

3.0

V

Static Drain-Source

On-Resistance

RDS(on)

VGS=10V

ID=19A

13

16.5

mΩ

VGS=4.5V

ID=16A

17

23

mΩ

Forward Transconductance

gFS

VDS=5V

ID=19A

43

S

Drain-Source Diode Forward

Voltage

VSD

VGS=0V

IS=4A

0.79

1.3

V

Input Capacitance

Ciss

VDS=20V

VGS=0V

f=1.0MHz

755

pF

Output Capacitance

Coss

121

Reverse Transfer Capacitance

Crss

102

Turn-On Delay Time

td(on)

VDD=20V

ID=1.0A

VGS=10V

RG=6Ω

16

ns

Turn-On Rise Time

tr

29

Turn-Off Delay Time

td(off)

42

Turn-Off Fall Time

tf

10

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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STU446S Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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