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S1PDB5016 Datasheet(PDF) 2 Page - Sirectifier Semiconductors |
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S1PDB5016 Datasheet(HTML) 2 Page - Sirectifier Semiconductors |
2 / 3 page Single Phase Bridge Rectifiers Symbol Test Conditions Characteristic Values Unit VR=VRRM; TVJ=25 oC VR=VRRM; TVJ=TVJM < 10 < 1500 uA VF IF=25A; TVJ=25 oC < 1.1 V IR VTO For power-loss calculations only 0.8 V rT TVJ=TVJM 3.867 m per diode per module RthJC 1.2 0.30 K/W per diode per module RthJK 1.4 0.35 K/W dS Creeping distance on surface 10 mm dA Creepage distance in air 9.4 mm a Max. allowable acceleration 50 m/s 2 _ _ _ FEATURES * Rating to 1600V PRV * High efficiency * Glass passivated chip junction * Electrically isolated metal case for maximum heat dissipation APPLICATIONS * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DCpower supplies * Field supply for DC motors ADVANTAGES * Easy to mount one screw * Space and weight savings * Improved temperature and power cycling S1PDB50005 thru S1PDB5018 P2 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
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