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S3PDB86N12 Datasheet(PDF) 2 Page - Sirectifier Semiconductors |
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S3PDB86N12 Datasheet(HTML) 2 Page - Sirectifier Semiconductors |
2 / 2 page Three Phase Rectifier Modules FEATURES * Package with DCB base plate * Isolation voltage 3000 V~ * Glass passivated chips * Leads suitable for PCB soldering * Low forward voltage drop ADVANTAGES * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling APPLICATIONS * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Symbol Test Conditions Characteristic Values Unit VR=VRRM; TVJ=25oC VR=VRRM; TVJ=TVJM < 0.5 < 3 mA VF IF=80A; TVJ=25oC < 1.5 V IR VTO For power-loss calculations only 0.8 V rT 7.5 m per diode; DC current per module RthJC 1.2 0.2 K/W per diode; DC current per module RthJK 1.5 0.25 K/W dS Creeping distance on surface 11.2 mm dA Creepage distance in air 9.7 mm a Max. allowable acceleration 50 m/s2 _ _ _ S3PDB86NXX * UL File NO.E310749 * RoHS compliant P2 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
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