BR12N60 datasheet(2/6 Pages) FOSHAN

Part #	BR12N60

Description	N-CHANNEL MOSFET in a TO-220 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

BR12N60

Rev.D Nov.-2015

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Drain-Source Voltage

VDSS

600

V

Drain Current

ID(Tc=25℃)

12

A

ID(Tc=100℃)

7.4

A

Drain Current - Pulsed

IDM

48

A

Gate-Source Voltage

VGSS

±30

V

Single Pulsed Avalanche Energy

EAS

870

mJ

Repetitive Avalanche Energy

EAR

22.5

mJ

Avalanche Current

IAR

12

A

Power Dissipation

PD(Tc=25℃)

225

W

Operating and Storage Temperature Range

TJ,TSTG

-55 to 150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Drain-Source Breakdown Voltage

BVDSS VGS=0V

ID=250μA

600

V

Zero Gate Voltage Drain Current

IDSS

VDS=600V

VGS=0V

1

μA

VDS=480V

TC=125℃

10

μA

Gate-Body Leakage Current,

Forward

IGSS

VGS=±30V

VDS=0V

±0.1

μA

Gate Threshold Voltage

VGS(th)

VDS=VGS

ID=250μA

2

4

V

Static Drain-Source

On-Resistance

RDS(on) VGS=10V

ID=6.0A

0.53

0.65

Ω

Forward Transconductance

gFS

VDS=40V

ID=6.0A

13

S

Drain-Source Diode Forward

Voltage

VSD

VGS=0V

IS=12A

1.4

V

Input Capacitance

Ciss

VDS=25V

VGS=0V

f=1.0MHz

1760

2290

pF

Output Capacitance

Coss

182

235

pF

Reverse Transfer Capacitance

Crss

21

28

pF

Turn-On Delay Time

td(on)

VDD=300V

ID=12A

RG=25Ω

30

70

ns

Turn-On Rise Time

tr

85

180

ns

Turn-Off Delay Time

td(off)

140

280

ns

Turn-Off Fall Time

tf

90

190

ns

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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BR12N60 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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