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RT9610C Datasheet(PDF) 3 Page - Richtek Technology Corporation

Part # RT9610C
Description  High Voltage Synchronous Rectified Buck MOSFET Driver
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Manufacturer  RICHTEK [Richtek Technology Corporation]
Direct Link  http://www.richtek.com
Logo RICHTEK - Richtek Technology Corporation

RT9610C Datasheet(HTML) 3 Page - Richtek Technology Corporation

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RT9610C
3
DS9610C-01
April 2016
www.richtek.com
©
Copyright
2016 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
Functional Block Diagram
Shoot-Through
Protection
BOOT
UGATE
PHASE
POR
VCC
R
R
Tri-State
Detect
PWM
EN
Control
Logic
LGATE
GND
VCC
VCC
Operation
POR (Power On Reset)
POR block detects the voltage at the VCC pin. When the
VCC pin voltage is higher than POR rising threshold, the
POR pin output voltage (POR output) is high. POR output
is low when VCC is not higher than POR rising threshold.
When the POR pin voltage is high, UGATE and LGATE
can be controlled by PWM input voltage. If the POR pin
voltage is low, both UGATE and LGATE will be pulled to
low.
Tri-State Detect
When both POR output and EN pin voltages are high,
UGATE and LGATE can be controlled by PWM input. There
are three PWM input modes which are high, low, and
shutdown state. If PWM input is within the shutdown
window, both UGATE and LGATE outputs are low. When
PWM input is higher than its rising threshold, UGATE is
high and LGATE is low. When PWM input is lower than
its falling threshold, UGATE is low and LGATE is high.
Control Logic
Control logic block detects whether high side MOSFET
is turned off by monitoring (UGATE - PHASE) voltages
below 1.1V or PHASE voltage below 2V. To prevent the
overlap of the gate drives during the UGATE pulls low and
the LGATE pulls high, low side MOSFET can be turned
on only after high side MOSFET is effectively turned off.
Shoot-Through Protection
Shoot-through protection block implements the dead-time
when both high side and low side MOSFETs are turned
off. With shoot-through protection block, high side and
low side MOSFETs are never turned on simultaneously.
Thus, shoot-through between high side and low side
MOSFETs is prevented.


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