©2004 Fairchild Semiconductor Corporation

MMBZ5221B-MMBZ5257B, Rev. A1

Device

Mark

Ω

Ω

Ω) @ I

Ω

Ω

Ω) @ I

µµµA) @ V

MMBZ5221B

MMBZ5223B

MMBZ5226B

MMBZ5227B

MMBZ5228B

MMBZ5229B

18A

18C

8A

8B

8C

8D

2.4

2.7

3.3

3.6

3.9

4.3

30

30

28

24

23

22

20

20

20

20

20

20

1,200

1,300

1,600

1,700

1,900

1,000

0.25

0.25

0.25

0.25

0.25

0.25

100

75

25

15

10

5.0

1.0

1.0

1.0

1.0

1.0

1.0

MMBZ5230B

MMBZ5231B

MMBZ5232B

MMBZ5233B

8E

8F

8G

8H

4.7

5.1

5.6

6.0

19

17

11

7.0

20

20

20

20

1,900

1,600

1,600

1,600

0.25

0.25

0.25

0.25

5.0

5.0

5.0

5.0

2.0

2.0

3.0

3.5

MMBZ5234B

MMBZ5235B

MMBZ5236B

MMBZ5237B

8J

8K

8L

8M

6.2

6.8

7.5

8.2

7.0

5.0

6.0

8.0

20

20

20

20

1,000

750

500

500

0.25

0.25

0.25

0.25

5.0

3.0

3.0

3.0

4.0

5.0

6.0

6.5

MMBZ5238B

MMBZ5239B

MMBZ5240B

MMBZ5241B

MMBZ5242B

8N

8P

8Q

8R

8S

8.7

9.1

10

11

12

8.0

10

17

22

30

20

20

20

20

20

600

600

600

600

600

0.25

0.25

0.25

0.25

0.25

3.0

3.0

3.0

2.0

1.0

6.5

7.0

8.0

8.4

8.1

MMBZ5243B

MMBZ5244B

MMBZ5245B

MMBZ5246B

MMBZ5247B

8T

8U

8V

8W

8X

13

14

15

16

17

13

15

16

17

19

9.5

9.0

8.5

7.8

7.4

600

600

600

600

600

0.25

0.25

0.25

0.25

0.25

500

100

100

100

100

9.9

10

11

12

13

Zeners

MMBZ5221B-MMBZ5257B

* These ratings are limiting values above which the serviceability of the diode may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Symbol

Parameter

Value

Units

Power Dissipation

350

mW

Storage Temperature Range

-55 to +150

°C

Operating Junction Temperature

+150

°C

Tolerance = 5%

1

2

3

SOT-23

CONNECTION

DIAGRAM

1

3

2 NC