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MJE13007 Datasheet(PDF) 7 Page - ON Semiconductor |
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MJE13007 Datasheet(HTML) 7 Page - ON Semiconductor |
7 / 12 page MJE13007 http://onsemi.com 7 VOLTAGE REQUIREMENTS (continued) In the four application examples (Table 2) load lines are shown in relation to the pulsed forward and reverse biased SOA curves. In circuits A and D, inductive reactance is clamped by the diodes shown. In circuits B and C the voltage is clamped by the output rectifiers, however, the voltage induced in the primary leakage inductance is not clamped by these diodes and could be large enough to destroy the device. A snubber network or an additional clamp may be required to keep the turn–off load line within the Reverse Bias SOA curve. Load lines that fall within the pulsed forward biased SOA curve during turn–on and within the reverse bias SOA curve during turn–off are considered safe, with the following assumptions: 1. The device thermal limitations are not exceeded. 2. The turn–on time does not exceed 10 µs (see standard pulsed forward SOA curves in Figure 6). 3. The base drive conditions are within the specified limits shown on the Reverse Bias SOA curve (Figure 7). CURRENT REQUIREMENTS An efficient switching transistor must operate at the required current level with good fall time, high energy handling capability and low saturation voltage. On this data sheet, these parameters have been specified at 5.0 amperes which represents typical design conditions for these devices. The current drive requirements are usually dictated by the VCE(sat) specification because the maximum saturation voltage is specified at a forced gain condition which must be duplicated or exceeded in the application to control the saturation voltage. SWITCHING REQUIREMENTS In many switching applications, a major portion of the transistor power dissipation occurs during the fall time (tfi). For this reason considerable effort is usually devoted to reducing the fall time. The recommended way to accomplish this is to reverse bias the base–emitter junction during turn–off. The reverse biased switching characteristics for inductive loads are shown in Figures 12 and 13 and resistive loads in Figures 10 and 11. Usually the inductive load components will be the dominant factor in SWITCHMODE applications and the inductive switching data will more closely represent the device performance in actual application. The inductive switching characteristics are derived from the same circuit used to specify the reverse biased SOA curves, (see Table 1) providing correlation between test procedures and actual use conditions. SWITCHING TIME NOTES In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and any coil driver, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10–90% Vclamp tfi = Current Fall Time, 90–10% IC tti = Current Tail, 10–2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the turn–off waveforms is shown in Figure 12 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN222A: PSWT = 1/2 VCCIC(tc) f Typical inductive switching times are shown in Figure 13. In general, trv + tfi ≅ tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25 °C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100°C. |
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