BAV21WS datasheet(2/6 Pages) FOSHAN

Part #	BAV21WS

Description	Silicon Diode in a SOD-323 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

BAV19WS-BAV21WS

Rev.F Mar.-2016

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

BAV19WS

BAV20WS

BAV21WS

Peak Repetitive Reverse Voltage

VRRM

120

200

250

V

Working Peak Reverse Voltage, DC

Reverse Voltage

VRWM，

VR

100

150

200

V

RMS Reverse Voltage

VR（RMS）

71

106

141

V

Non-Repetitive Peak Forward

Current

IFM

400

mA

Output Current

IO

200

mA

Non-Repetitive Peak Forward Surge

Current

IFSM

t=1.0

μs:2.5A

t=1.0s:0.5A

A

Power Dissipation

Pd

200

mW

Typical Thermal Resistance

Junction to Ambient

RθJA

500

℃

/W

Junction and Storage Temperature

Range

TJ,Tstg

-65

TO +150

℃℃

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

数值

Rating

单位

Unit

MIN

MAX

Forward Voltage

V(BR)

IR=100uA

BAV19WS

120

V

BAV20WS

200

BAV21WS

250

Peak Forward Voltage

VFM

IF=100mA

1.0

V

IF=200mA

1.25

Instantaneous Reverse

Current

IRM

Tj=25℃

VR=VRWM

100

nA

Tj=100℃

VR=VRWM

15

uA

Reverse Recovery Time

trr

IF=IR=30mA

Irr=0.1хIR

Rl=100Ω

50

ns

Total Capacitance

CT

VR=0

f=1.0MHz

5.0

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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BAV21WS Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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