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LM4903 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LM4903 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 17 page Absolute Maximum Ratings (Note 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (Note 10) 6.0V Storage Temperature −65˚C to +150˚C Input Voltage −0.3V to V DD +0.3V Power Dissipation (Notes 3, 11) Internally Limited ESD Susceptibility (Note 4) 2000V ESD Susceptibility (Note 5) 200V Junction Temperature 150˚C Thermal Resistance θ JC (MSOP) 56˚C/W θ JA (MSOP) 190˚C/W Operating Ratings Temperature Range T MIN ≤ T A ≤ T MAX −40˚C ≤ T A ≤ 85˚C Supply Voltage 2.0V ≤ V DD ≤ 5.5V Electrical Characteristics V DD =5V (Notes 1, 2) The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for T A = 25˚C. Symbol Parameter Conditions LM4903 Units (Limits) Typical Limit (Note 6) (Notes 7, 8) I DD Quiescent Power Supply Current V IN = 0V, Io = 0A, No Load 3 7 mA (max) V IN = 0V, Io = 0A, 8 Ω Load 4 10 mA (max) I SD Shutdown Current V SD =VGND 0.8 2.0 µA (max) V SDIH Shutdown Voltage Input High 1.5 V (min) V SDIL Shutdown Voltage Input Low 1.3 V (max) V OS Output Offset Voltage 7 50 mV (max) R OUT Resistor Output to GND (Note 9) 8.5 9.7 k Ω (max) 7.0 k Ω (min) P o Output Power THD = 1% (max);f=1kHz 1.07 0.9 W T WU Wake-up time 100 mS (max) THD+N Total Harmonic Distortion+Noise P o = 0.5 Wrms; f = 1kHz 0.2 % PSRR Power Supply Rejection Ratio V ripple = 200mV sine p-p Input terminated with 10 Ω 60 (f = 217Hz) 64 (f = 1kHz) 55 dB (min) Electrical Characteristics V DD =3V (Notes 1, 2) The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for T A = 25˚C. Symbol Parameter Conditions LM4903 Units (Limits) Typical Limit (Note 6) (Notes 7, 8) I DD Quiescent Power Supply Current V IN = 0V, Io = 0A, No Load 2 7 mA (max) V IN = 0V, Io = 0A, 8 Ω Load 3 9 mA (max) I SD Shutdown Current V SD =VGND 0.1 2.0 µA (max) V SDIH Shutdown Voltage Input High 1.3 V (min) V SDIL Shutdown Voltage Input Low 1.0 V (max) V OS Output Offset Voltage 7 50 mV (max) R OUT Resistor Output to GND (Note 9) 8.5 9.7 k Ω (max) 7.0 k Ω (min) P o Output Power (8 Ω) THD = 1% (max);f=1kHz 390 mW (4 Ω) THD = 1% (max);f=1kHz 525 T WU Wake-up time 75 mS (max) THD+N Total Harmonic Distortion+Noise P o = 0.25 Wrms; f = 1kHz 0.1 % PSRR Power Supply Rejection Ratio V ripple = 200mV sine p-p Input terminated with 10 Ω 70 (f = 217Hz) 65 (f = 1kHz) 55 dB (min) www.national.com 3 |
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