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TLV74310PDBVR Datasheet(PDF) 4 Page - Texas Instruments |
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TLV74310PDBVR Datasheet(HTML) 4 Page - Texas Instruments |
4 / 26 page 4 TLV743P SBVS310 – JULY 2017 www.ti.com Product Folder Links: TLV743P Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated 6 Specifications (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.1 Absolute Maximum Ratings over operating junction temperature range (unless otherwise noted); all voltages are with respect to GND (1) MIN MAX UNIT Voltage VIN –0.3 6 V VEN –0.3 VIN + 0.3 VOUT –0.3 3.6 Current IOUT Internally limited A Output short-circuit duration Indefinite Temperature Operating junction, TJ –40 150 °C Storage, Tstg –65 160 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VIN Input range 1.4 5.5 V VOUT Output range 1 3.3 V IOUT Output current 0 300 mA VEN Enable range 0 VIN V TJ Junction temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) TLV743P UNIT DBV (SOT-23) 5 PINS RθJA Junction-to-ambient thermal resistance 228.4 °C/W RθJC(top) Junction-to-case (top) thermal resistance 151.5 °C/W RθJB Junction-to-board thermal resistance 55.8 °C/W ψJT Junction-to-top characterization parameter 31.4 °C/W ψJB Junction-to-board characterization parameter 54.8 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W |
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