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IRL3202 Datasheet(PDF) 2 Page - International Rectifier

Part No. IRL3202
Description  HEXFET Power MOSFET
Download  7 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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 2 page
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IRL3202
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
VGS = 0V, ID = 250µA
D
V(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
–––
0.029 –––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.019
VGS = 4.5V, ID = 29A
„
–––
––– 0.016
W
VGS = 7.0V, ID = 29A
„
VGS(th)
Gate Threshold Voltage
0.70
–––
–––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
28
–––
–––
S
VDS = 16V, ID = 29A
–––
–––
25
µA
VDS = 20V, VGS = 0V
–––
–––
250
VDS = 10V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 10V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -10V
Qg
Total Gate Charge
–––
–––
43
ID = 29A
Qgs
Gate-to-Source Charge
–––
–––
12
nC
VDS = 16V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
13
VGS = 4.5V, See Fig. 6
„
td(on)
Turn-On Delay Time
–––
9.8
–––
VDD = 10V
tr
Rise Time
–––
100
–––
ns
ID = 29A
td(off)
Turn-Off Delay Time
–––
63
–––
RG = 9.5W, VGS = 4.5V
tf
Fall Time
–––
82
–––
RD = 0.3W,
„
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
2000 –––
VGS = 0V
Coss
Output Capacitance
–––
800
–––
pF
VDS = 15V
Crss
Reverse Transfer Capacitance
–––
290
–––
ƒ = 1.0MHz, See Fig. 5
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ I
SD £ 29A, di/dt £ 63A/µs, V
DD £ V(BR)DSS,
TJ £ 150°C
Notes:
‚ Starting TJ = 25°C, L = 0.64mH
RG = 25W , IAS = 29A.
„ Pulse width £ 300µs; duty cycle £ 2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 29A, VGS = 0V
„
trr
Reverse Recovery Time
–––
68
100
ns
TJ = 25°C, IF = 29A
Qrr
Reverse Recovery Charge
–––
130
190
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
48
190
A
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
Static Drain-to-Source On-Resistance
IGSS
nH
LS
Internal Source Inductance
–––
7.5
–––
LD
Internal Drain Inductance
–––
4.5
–––
IDSS
Drain-to-Source Leakage Current




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