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IRL3202 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRL3202
Description  HEXFET Power MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 4.5V
48
ID @ TC = 100°C
Continuous Drain Current, VGS @ 4.5V
30
A
IDM
Pulsed Drain Current

190
PD @TC = 25°C
Power Dissipation
69
W
Linear Derating Factor
0.56
W/°C
VGS
Gate-to-Source Voltage
± 10
V
VGSM
Gate-to-Source Voltage
14
V
(Start Up Transient, tp = 100µs)
EAS
Single Pulse Avalanche Energy
‚
270
mJ
IAR
Avalanche Current

29
A
EAR
Repetitive Avalanche Energy

6.9
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
11/18/97
IRL3202
PRELIMINARY
HEXFET® Power MOSFET
PD 9.1695A
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment.
Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
S
D
G
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RqJC
Junction-to-Case
–––
1.8
RqCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RqJA
Junction-to-Ambient
–––
62
Thermal Resistance
VDSS = 20V
RDS(on) = 0.016W
ID = 48A
TO-220AB
Description
l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching




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