JANSR2N7261 datasheet(5/12 Pages) IRF

Part #	JANSR2N7261

Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

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Manufacturer	IRF [International Rectifier]

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5

Post-Irradiation

Fig 6. Typical On-State Resistance Vs.

Neutron Fluence Level

Fig 5. Typical Zero Gate Voltage Drain

Current Vs. Total Dose Exposure

Fig 8b. VDSS Stress Equals

80% of BVDSS During Radiation

Fig 9. High Dose Rate

(Gamma Dot) Test Circuit

Fig 7. Typical Transient Response

of Rad Hard HEXFET During

1x1012 Rad (Si)/Sec Exposure

IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices

Fig 8a. Gate Stress of VGSS

Equals 12 Volts During

Radiation

Similar Part No. - JANSR2N7261

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