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BD651F Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD651F Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor BD651F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 140 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 50mA 3.0 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V ICBO Collector Cutoff Current VCB= 140V; IE= 0 0.1 mA VCB= 70V; IE= 0; TC= 150℃ 1.0 ICEO Collector Cutoff Current VCE= 60V; IB= 0 0.2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE-1 DC Current Gain IC= 0.5A ; VCE= 3V 1900 hFE-2 DC Current Gain IC= 3A ; VCE= 3V 750 hFE-3 DC Current Gain IC= 8A ; VCE= 3V 1800 |
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