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BD650F Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD650F Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Darlington Power Transistor BD650F DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) · High DC Current Gain · Low Saturation Voltage · Complement to Type BD649F · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IB Base Current-Continuous -0.15 A PC Collector Power Dissipation @ Ta=25℃ 20 W Collector Power Dissipation @ TC=25℃ 32 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.6 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 6.3 ℃ /W |
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