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BD139 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD139 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BD139 DESCRIPTION · DC Current Gain- : hFE= 63(Min)@ IC= 0.15A · Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min) · Complement to type BD140 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous 0.5 A PC Collector Power Dissipation @ Ta=25℃ 1.25 W Collector Power Dissipation @ TC=25℃ 12.5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 10 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃ /W |
Similar Part No. - BD139_17 |
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Similar Description - BD139_17 |
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