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HSMS-2829-TR2 Datasheet(PDF) 5 Page - Agilent(Hewlett-Packard) |
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HSMS-2829-TR2 Datasheet(HTML) 5 Page - Agilent(Hewlett-Packard) |
5 / 14 page 5 Applications Information Product Selection Agilent’s family of surface mount Schottky diodes provide unique solutions to many design prob- lems. Each is optimized for certain applications. The first step in choosing the right product is to select the diode type. All of the products in the HSMS-282x family use the same diode chip – they differ only in package configuration. The same is true of the HSMS-280x, -281x, 285x, -286x and -270x families. Each family has a different set of characteristics, which can be compared most easily by consult- ing the SPICE parameters given on each data sheet. The HSMS-282x family has been optimized for use in RF applica- tions, such as DC biased small signal detectors to 1.5 GHz. Biased or unbiased large signal detectors (AGC or power monitors) to 4 GHz. Mixers and frequency multipliers to 6 GHz. The other feature of the HSMS-282x family is its unit-to-unit and lot-to-lot consis- tency. The silicon chip used in this series has been designed to use the fewest possible processing steps to minimize variations in diode characteristics. Statistical data on the consistency of this product, in terms of SPICE parameters, is available from Agilent. For those applications requiring very high breakdown voltage, use the HSMS-280x family of diodes. Turn to the HSMS-281x when you need very low flicker noise. The HSMS-285x is a family of zero bias detector diodes for small signal applications. For high frequency detector or mixer applications, use the HSMS-286x family. The HSMS-270x is a series of specialty diodes for ultra high speed clipping and clamping in digital circuits. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The most common of several different types, the passivated diode, is shown in Figure 10, along with its equivalent circuit. RS is the parasitic series resis- tance of the diode, the sum of the bondwire and leadframe resis- tance, the resistance of the bulk layer of silicon, etc. RF energy coupled into RS is lost as heat—it does not contribute to the recti- fied output of the diode. CJ is parasitic junction capacitance of the diode, controlled by the thick- ness of the epitaxial layer and the diameter of the Schottky contact. Rj is the junction resistance of the diode, a function of the total current flowing through it. RS Rj Cj METAL SCHOTTKY JUNCTION PASSIVATION PASSIVATION N-TYPE OR P-TYPE EPI LAYER N-TYPE OR P-TYPE SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT CIRCUIT 8.33 X 10-5 nT Rj = –––––––––––– = RV – R s I S + Ib 0.026 ≈ ––––– at 25°C I S + Ib where n = ideality factor (see table of SPICE parameters) T = temperature in °K IS = saturation current (see table of SPICE parameters) Ib = externally applied bias current in amps Rv = sum of junction and series resistance, the slope of the V-I curve IS is a function of diode barrier height, and can range from picoamps for high barrier diodes to as much as 5 µA for very low barrier diodes. The Height of the Schottky Barrier The current-voltage characteristic of a Schottky barrier diode at room temperature is described by the following equation: V - IRS I = IS (e ––––– – 1) 0.026 On a semi-log plot (as shown in the Agilent catalog) the current graph will be a straight line with inverse slope 2.3 X 0.026 = 0.060 volts per cycle (until the effect of Figure 10. Schottky Diode Chip. 88759/02-5.PM6.0J 2001.04.25, 6:41 PM Page 5 Adobe PageMaker 6.0J/PPC |
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