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GT30J101 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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GT30J101 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 6 page  GT30J101 2002-01-18 1 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs (max) • Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta ==== 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 30 Collector current 1 ms ICP 60 A Collector power dissipation (Tc = 25°C) PC 155 W Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g Preliminary |
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