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2N7002PT Datasheet(PDF) 6 Page - NXP Semiconductors |
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2N7002PT Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 16 page 2N7002PT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 2 July 2010 6 of 16 NXP Semiconductors 2N7002PT 60 V, 310 mA N-channel Trench MOSFET 7. Characteristics [1] Pulse test: tp 300 s; 0.01. Table 7. Characteristics Tj =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =10 A; VGS = 0 V 60 --V VGS(th) gate-source threshold voltage ID =250 A; VDS =VGS 1.1 1.75 2.4 V IDSS drain leakage current VDS =60V; VGS =0V Tj =25 C --1 A Tj = 150 C --10 A IGSS gate leakage current VGS = 20 V; VDS = 0 V - - 100 nA RDSon drain-source on-state resistance [1] VGS =5V; ID =50mA - 1.3 2 VGS =10V; ID =500 mA - 1 1.6 gfs forward transconductance VDS =10V; ID = 200 mA [1] - 400 - mS Dynamic characteristics QG(tot) total gate charge ID =300 mA; VDS =30V; VGS =4.5 V -0.6 0.8 nC QGS gate-source charge - 0.2 - nC QGD gate-drain charge - 0.2 - nC Ciss input capacitance VGS =0V; VDS =10V; f=1MHz - 3050pF Coss output capacitance - 7 - pF Crss reverse transfer capacitance -4 -pF td(on) turn-on delay time VDD =50V; RL =250 ; VGS =10V; RG =6 - 36ns tr rise time -4 -ns td(off) turn-off delay time - 10 20 ns tf fall time - 5 - ns Source-drain diode VSD source-drain voltage IS =115 mA; VGS = 0 V 0.47 0.75 1.1 V |
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