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FQI10N20C Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQI10N20C Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 9 page  ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 QFETTM FQB10N20C/FQI10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. Features • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V • Low gate charge ( typical 20 nC) • Low Crss ( typical 40.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQB10N20C/FQI10N20C Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 9.5 A - Continuous (TC = 100°C) 6.0 A IDM Drain Current - Pulsed (Note 1) 38 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ IAR Avalanche Current (Note 1) 9.5 A EAR Repetitive Avalanche Energy (Note 1) 7.2 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 72 W - Derate above 25°C 0.57 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 1.74 °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ! " ! ! ! " " " ! " ! ! ! " " " S D G D2-PAK FQB Series I2-PAK FQI Series GS D GS D |
Similar Part No. - FQI10N20C |
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Similar Description - FQI10N20C |
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