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V20PWM15C Datasheet(PDF) 1 Page - Vishay Siliconix |
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V20PWM15C Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page V20PWM15C www.vishay.com Vishay General Semiconductor Revision: 01-Jun-17 1 Document Number: 87512 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.61 V at IF = 5 A FEATURES • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. MECHANICAL DATA Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Notes (1) With infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RθJA PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 150 V IFSM 150 A VF at IF = 10 A (TA = 125 °C) 0.69 V TJ max. 175 °C Package SlimDPAK (TO-252AE) Circuit configuration Common cathode SlimDPAK (TO-252AE) TMBS® eSMP® Series 1 2 K PIN 1 K HEATSINK PIN 2 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20PWM150C UNIT Device marking code V20PWM150C Maximum repetitive peak reverse voltage VRRM 150 V Maximum average forward rectified current (Fig. 1) per device IF(AV) (1) 20 A per diode 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Operating junction temperature range TJ (2) -40 to +175 °C Storage temperature range TSTG -55 to +175 °C |
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