V20PWM15C

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Vishay General Semiconductor

Revision: 01-Jun-17

1

Document Number: 87512

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

FEATURES

• Very low profile - typical height of 1.3 mm

• Trench MOS Schottky technology

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters,

freewheeling diodes, and polarity protection applications.

MECHANICAL DATA

Case: SlimDPAK (TO-252AE)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

Base

P/NHM3

-

halogen-free,

RoHS-compliant,

and

AEC-Q101 qualified

Terminals:

matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Notes

PRIMARY CHARACTERISTICS

20 A

150 V

150 A

0.69 V

175 °C

Package

SlimDPAK (TO-252AE)

Circuit configuration

Common cathode

SlimDPAK (TO-252AE)

1

2

K

PIN 1

K

HEATSINK

PIN 2

PARAMETER

SYMBOL

V20PWM150C

UNIT

Device marking code

V20PWM150C

Maximum repetitive peak reverse voltage

150

V

Maximum average forward rectified current (Fig. 1)

per device

20

A

per diode

10

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

150

A

Operating junction temperature range

-40 to +175

°C

Storage temperature range

-55 to +175

°C