DG417BMIL, DG418BMIL, DG419BMIL

www.vishay.com

Vishay Siliconix

S12-0496-Rev. B, 05-Mar-12

4

Document Number: 63275

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

a. Refer to PROCESS OPTION FLOWCHART.

b. Room = 25 °C, full = as determined by the operating temperature suffix.

c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.

e. Guaranteed by design, not subject to production test.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TEST CONDITIONS

UNLESS OTHERWISE SPECIFIED

V+ = 12 V, V- = - 0 V

A SUFFIX

- 55 °C to 125 °C

PARAMETER

SYMBOL

UNIT

Power Supplies

Positive Supply Current

I+

V+ = 16.5 V, V- = - 16.5 V

Room

0.001

1

μA

Full

5

Negative Supply

Current

I-

Room

- 0.001

- 1

Full

- 5

Logic Supply Current

Room

0.001

1

Full

5

Ground Current

Room

- 0.001

- 1

Full

- 5

Analog Switch

Full

0

12

V

Drain-Source

On-Resistance

V+ = 10.8 V

Room

26

35



Full

26

52

Dynamic Characteristics

Turn-On Time

Room

100

125

ns

Full

100

155

Turn-Off Time

Room

38

66

Full

38

69

Break-Before-Make

Time Delay

DG419B

Room

62

25

Transition Time

Room

95

119

Full

95

153

Charge Injection

Q

Room

18

pC

Power Supplies

Positive Supply Current

I+

Room

0.001

1

μA

Full

0.001

5

Negative Supply

Current

I-

Room

- 0.001

- 1

- 5

Logic Supply Current

Room

0.001

1

5

Ground Current

Room

- 0.001

- 1

- 5