DS_K6F8016U6C datasheet(3/9 Pages) SAMSUNG

Part #	DS_K6F8016U6C

Description	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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K6F8016U6C Family

Revision 0.0

May 2003

3

CMOS SRAM

Preliminary

PRODUCT LIST

Industrial Temperature Products(-40~85

°C)

Part Name

Function

K6F8016U6C-FF55

K6F8016U6C-FF70

48-FBGA, 55ns, 3.0V

48-FBGA, 70ns, 3.0V

ABSOLUTE MAXIMUM RATINGS1)

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be

restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions over 1 second may affect reliability.

Item

Symbol

Ratings

Unit

Voltage on any pin relative to Vss

VIN, VOUT

-0.5 to VCC+0.3V(Max. 3.6V)

V

Voltage on Vcc supply relative to Vss

VCC

-0.3 to 3.6

V

Power Dissipation

PD

1.0

W

Storage temperature

TSTG

-65 to 150

°C

Operating Temperature

TA

-40 to 85

°C

FUNCTIONAL DESCRIPTION

1. X means don

′t care. (Must be low or high state)

CS1

CS2

OE

WE

LB

UB

I/O1~8

I/O9~16

Mode

Power

H

X1)

High-Z

Deselected

Standby

X1)

L

X1)

High-Z

Deselected

Standby

X1)

H

High-Z

Deselected

Standby

L

H

L

X1)

High-Z

Output Disabled

Active

L

H

X1)

L

High-Z

Output Disabled

Active

L

H

L

H

L

H

Dout

High-Z

Lower Byte Read

Active

L

H

L

H

L

High-Z

Dout

Upper Byte Read

Active

L

H

L

H

L

Dout

Word Read

Active

L

H

X1)

L

H

Din

High-Z

Lower Byte Write

Active

L

H

X1)

L

H

L

High-Z

Din

Upper Byte Write

Active

L

H

X1)

L

Din

Word Write

Active

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