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DS_K6F2008U2E Datasheet(PDF) 3 Page - Samsung semiconductor

Part # DS_K6F2008U2E
Description  256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

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Revision 2.0
CMOS SRAM
K6F2008U2E Family
3
April 2002
PRODUCT LIST
Industrial Temperature Products(-40~85
°C)
Part Name
Function
K6F2008U2E-YF55
K6F2008U2E-YF70
K6F2008U2E-EF55
K6F2008U2E-EF70
32-sTSOP1-F, 55ns, 3.0V, LL
32-sTSOP1-F, 70ns, 3.0V, LL
48(36)-TBGA, 55ns, 3.0V, LL
48(36)-TBGA, 70ns, 3.0V, LL
FUNCTIONAL DESCRIPTION
1. X means don
t care (Must be high or low states)
CS1
CS2
OE
WE
I/O
Mode
Power
H
X1)
X1)
X1)
High-Z
Deselected
Standby
X1)
L
X1)
X1)
High-Z
Deselected
Standby
L
H
H
H
High-Z
Output Disable
Active
L
H
L
H
Dout
Read
Active
L
H
X1)
L
Din
Write
Active
ABSOLUTE MAXIMUM RATINGS1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.2 to VCC+0.3V
V
Voltage on Vcc supply relative to Vss
VCC
-0.2 to 3.6V
V
Power Dissipation
PD
1.0
W
Storage temperature
TSTG
-65 to 150
°C
Operating Temperature
TA
-40 to 85
°C


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