DS_K6F2008U2E datasheet(6/10 Pages) SAMSUNG

Part #	DS_K6F2008U2E

Description	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Download	10 Pages

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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6 / 10 page

Revision 2.0

CMOS SRAM

K6F2008U2E Family

6

April 2002

Address

Data Out

Previous Data Valid

Data Valid

TIMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, WE=VIH)

tAA

tRC

tOH

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

Data Valid

High-Z

CS1

Address

OE

Data out

NOTES (READ CYCLE)

1.

tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage

levels.

2. At any given temperature and voltage condition,

tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device

interconnection.

CS2

tOH

tAA

tOLZ

tLZ

tOHZ

tHZ(1,2)

tRC

tCO2

tOE

tCO1

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DS_K6F2008U2E Datasheet(PDF) 6 Page - Samsung semiconductor

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