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DS1855X-010 Datasheet(PDF) 4 Page - Dallas Semiconductor |
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DS1855X-010 Datasheet(HTML) 4 Page - Dallas Semiconductor |
4 / 20 page DS1855 4 of 20 MEMORY ORGANIZATION The DS1855’s serial EEPROM is internally organized with 256 words of 1 byte each. Each word requires an 8-bit address for random word addressing. The byte at address F9h determines the wiper setting for potentiometer 0, which contains 100 positions. Writing values above 63h to this address sets the wiper to its uppermost position, but the MSB is ignored. The byte at address F8h determines the wiper setting for potentiometer 1, which contains 256 positions (00h to FFh). Address locations FAh though FFh are reserved and should not be written. MEMORY LOCATION NAME OF MEMORY LOCATION FUNCTION OF MEMORY LOCATION 00h – F7h User Memory General-purpose user memory. F8h Potentiometer 1 Setting Writing to this byte controls the setting of potentiometer 1, a 256- position pot. Valid settings are 00h to FFh. F9h Potentiometer 0 Setting Writing to this byte controls the setting of potentiometer 0, a 100- position pot. Valid settings are 00h to 63h. MSB is ignored. FAh Software Lock Configuration Byte The three lower bits in this byte can be used to set write-protection to the 256-byte memory block. B2: Writing this bit to a 1 protects the upper page of memory. If this bit is set, memory locations F8h to FFh are configured for write-protection. B1: Writing this bit to a 1 protects the upper block of memory. If this bit is set, memory locations 80h to F7h are configured for write-protection. The upper page must be unlocked in order to modify the locking of this portion of memory. B0: Writing this bit to a 1 protects the lower block of memory. If this bit is set, memory locations 00h to 7Fh are configured for write-protection. The upper page must be unlocked in order to modify the locking of this portion of memory. B2 B1 B0 |
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