NGB18N40ACLB

Characteristic

Symbol

Value

Unit

Single Pulse Collector−to−Emitter Avalanche Energy

400

300

mJ

Reverse Avalanche Energy

2000

mJ

Characteristic

Symbol

Value

Unit

Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period)

750

ms

Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period)

5.0

ms

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction−to−Case

1.3

°C/W

Thermal Resistance, Junction−to−Ambient

50

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 5 seconds

275

°C

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Test Conditions

Temperature

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Clamp Voltage

380

395

420

V

390

405

430

Zero Gate Voltage Collector Current

−

2.0

20

mA

−

10

40*

−

1.0

10

Reverse Collector−Emitter Leakage Current

−

0.7

2.0

mA

−

12

25*

−

0.1

1.0

Reverse Collector−Emitter Clamp Voltage

27

33

37

V

30

36

40

25

32

35

Gate−Emitter Clamp Voltage

11

13

15

V

Gate−Emitter Leakage Current

384

640

100

0

mA

Gate Emitter Resistor

−

10

16

26

k

W

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

1.1

1.4

1.9

V

0.75

1.0

1.4

1.2

1.6

2.1*

Threshold Temperature Coefficient

(Negative)

−

−

−

−

3.4

−

mV/

°C

*Maximum Value of Characteristic across Temperature Range.

1. When surface mounted to an FR4 board using the minimum recommended pad size.

2. Pulse Test: Pulse Width

v 300 mS, Duty Cycle v 2%.

2

Publication Order Number:

NGB18N40ACLB/D

Specifications subject to change without notice.

© 2016 Littelfuse, Inc.

December, 2016 − Rev. 6